Invention Grant
US09281432B2 Photoelectric conversion element, method for manufacturingthe same, optical sensor, and solar cell 有权
光电转换元件,其制造方法,光学传感器和太阳能电池

Photoelectric conversion element, method for manufacturingthe same, optical sensor, and solar cell
Abstract:
A photoelectric conversion element includes a PN junction formed between an N-type oxide layer and a P-type oxide layer, in which the N-type oxide layer is formed of an oxide having a perovskite structure containing titanium and strontium, a part of strontium is substituted with a +3 valence metal element or a part of titanium is substituted with a +5 valence metal element, and the amount of the metal element substituted in the N-type oxide layer is 0.01 mass % to 0.75 mass %.
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