Invention Grant
US09281394B2 Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
有权
具有沟槽底部氧化物屏蔽和三维P体接触的纳米MOSFET
- Patent Title: Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
- Patent Title (中): 具有沟槽底部氧化物屏蔽和三维P体接触的纳米MOSFET
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Application No.: US14329751Application Date: 2014-07-11
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Publication No.: US09281394B2Publication Date: 2016-03-08
- Inventor: Hamza Yilmaz , Daniel Ng , Daniel Calafut , Madhur Bobde , Anup Bhalla , Ji Pan , Yeeheng Lee , Jongoh Kim
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L21/265 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/06 ; H01L29/08
Abstract:
A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device may include a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each of the trenches has a depth in a first dimension, a width in a second dimension and a length in a third dimension. The body region is of opposite conductivity type to the lightly and heavily doped layers. The source region is formed proximate the upper surface. One or more deep contacts are formed at one or more locations along the third dimension proximate one or more of the trenches. The contacts extend in the first direction from the upper surface into the lightly doped layer and are in electrical contact with the source region.
Public/Granted literature
- US20140319605A1 NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL P-BODY CONTACT Public/Granted day:2014-10-30
Information query
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