Invention Grant
- Patent Title: Manufacturing method for photoelectric conversion apparatus and photoelectric conversion apparatus
- Patent Title (中): 光电转换装置及光电转换装置的制造方法
-
Application No.: US14548153Application Date: 2014-11-19
-
Publication No.: US09281340B2Publication Date: 2016-03-08
- Inventor: Junji Iwata
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Canon USA, Inc. IP Division
- Priority: JP2013-241947 20131122
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/00

Abstract:
A manufacturing method for a photoelectric conversion apparatus in which a microlens is arranged for multiple electric charge accumulation regions formed on a semiconductor substrate, includes forming a first impurity region of a first conductive type on the semiconductor substrate; and forming a second impurity region of a second conductive type that is opposite the first conductive type in a part of the first impurity region to isolate the first impurity region into multiple regions such that each of the multiple electric charge accumulation regions includes isolated first impurity regions.
Public/Granted literature
- US20150145087A1 MANUFACTURING METHOD FOR PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION APPARATUS Public/Granted day:2015-05-28
Information query
IPC分类: