Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US14167535Application Date: 2014-01-29
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Publication No.: US09281316B2Publication Date: 2016-03-08
- Inventor: Sang Soo Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0108570 20130910
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/115 ; H01L29/66 ; H01L29/792
Abstract:
A semiconductor device includes stacked groups each including interlayer insulating patterns and conductive patterns and stacked in at least two tiers, wherein the insulating patterns and the conductive patterns are alternately stacked over a substrate and separated by slits, and a support body including holes and formed between the stacked groups.
Public/Granted literature
- US20150069484A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-03-12
Information query
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