Invention Grant
- Patent Title: Implementing inverted master-slave 3D semiconductor stack
- Patent Title (中): 实现倒立主从三维半导体堆栈
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Application No.: US14184868Application Date: 2014-02-20
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Publication No.: US09281302B2Publication Date: 2016-03-08
- Inventor: Paul W. Coteus , Shawn A. Hall , Todd E. Takken
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joan Pennington
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/367 ; H01L23/498 ; H01L25/00 ; H01L25/065 ; H01L23/00 ; H01L27/108

Abstract:
A method and apparatus are provided for implementing an enhanced three dimensional (3D) semiconductor stack. A chip carrier has an aperture of a first length and first width. A first chip has at least one of a second length greater than the first length or a second width greater than the first width; a second chip attached to the first chip, the second chip having at least one of a third length less than the first length or a third width less than the first width; the first chip attached to the chip carrier by connections in an overlap region defined by at least one of the first and second lengths or the first and second widths; the second chip extending into the aperture; and a heat spreader attached to the chip carrier and in thermal contact with the first chip for dissipating heat from both the first chip and second chip.
Public/Granted literature
- US20150236001A1 IMPLEMENTING INVERTED MASTER-SLAVE 3D SEMICONDUCTOR STACK Public/Granted day:2015-08-20
Information query
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