Invention Grant
- Patent Title: Semiconductor device including conductor patterns as electrodes of a capacitive element and manufacturing method thereof
- Patent Title (中): 包括作为电容元件的电极的导体图案的半导体装置及其制造方法
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Application No.: US14448954Application Date: 2014-07-31
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Publication No.: US09281272B2Publication Date: 2016-03-08
- Inventor: Tetsuya Watanabe
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-197551 20130924
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02 ; H01L21/3213
Abstract:
The present invention is capable of suppressing a variation in the characteristics of a semiconductor device. In a conductor pattern CPA and a conductor pattern CPB arranged so as to run side by side with each other, the conductor pattern CPA is divided into a first portion P1 (A) and a second portion P2 (A), and the conductor pattern CPB is also divided into a first portion P1 (B) and a second portion P2 (B). The first portion P1 (A) of the conductor pattern CPA and the second portion P2 (B) of the conductor pattern CPB are formed by first patterning using the same first mask, while the second portion P2 (A) of the conductor pattern CPA and the first portion P1 (B) of the conductor pattern CPB are formed by second patterning using the same second mask.
Public/Granted literature
- US20150084159A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2015-03-26
Information query
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