Invention Grant
- Patent Title: Through silicon via stacked structure and a method of manufacturing the same
- Patent Title (中): 通过硅堆叠结构及其制造方法
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Application No.: US13659928Application Date: 2012-10-25
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Publication No.: US09281242B2Publication Date: 2016-03-08
- Inventor: Po-Chun Lin
- Applicant: Po-Chun Lin
- Applicant Address: TW Gueishan Dist., Taoyuan
- Assignee: NANYA TECHNOLOGY CORP.
- Current Assignee: NANYA TECHNOLOGY CORP.
- Current Assignee Address: TW Gueishan Dist., Taoyuan
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/768 ; H01L25/04 ; H01L23/48 ; H01L25/11 ; H01L25/075 ; H01L25/07
Abstract:
A through silicon via (TSV) stacked structure made of stacked substrates. Each substrate includes multiple tapered through silicon vias, wherein the wider end of each tapered through silicon via is provided with a recessed portion and the narrower end of each tapered through silicon via protrudes from the substrate. The substrates are stacked one after another with the narrower end of each tapered through silicon via being fitting and jointing into a corresponding recessed portion of the tapered through silicon via.
Public/Granted literature
- US20140117556A1 THROUGH SILICON VIA STACKED STRUCTURE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-05-01
Information query
IPC分类:
