Invention Grant
US09277656B2 Method to fabricate a substrate including a material disposed on the edge of one or more non through hole formed in the substrate
有权
制造基板的方法,该基板包括设置在形成在基板中的一个或多个非通孔的边缘上的材料
- Patent Title: Method to fabricate a substrate including a material disposed on the edge of one or more non through hole formed in the substrate
- Patent Title (中): 制造基板的方法,该基板包括设置在形成在基板中的一个或多个非通孔的边缘上的材料
-
Application No.: US14551977Application Date: 2014-11-24
-
Publication No.: US09277656B2Publication Date: 2016-03-01
- Inventor: Sophie Giroud , Christine Ferrandon
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
- Applicant Address: FR Paris
- Assignee: Comissariat a l'énergie atomique et aux énergies alternatives
- Current Assignee: Comissariat a l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1361828 20131129
- Main IPC: H05K3/46
- IPC: H05K3/46 ; C23F1/04 ; H01L23/10 ; H01L23/26 ; H01L23/31

Abstract:
Method for producing a substrate comprising at least one getter material arranged on the walls of at least one blind hole, comprising at least the steps of: etching the blind hole through a first face of the substrate, depositing a continuous layer of getter material on the whole of the first face of the substrate and at least on the side walls of the blind hole, etching part of the layer of getter material located on the first face of the substrate such that said first face of the substrate is no longer covered by the getter material, in which the step of etching part of the layer of getter material comprises the implementation of an etching by ion beam machining, or chemical-mechanical planarization or polishing.
Public/Granted literature
Information query