Invention Grant
US09276571B2 Systems and methods for driving transistors with high threshold voltages
有权
用于驱动具有高阈值电压的晶体管的系统和方法
- Patent Title: Systems and methods for driving transistors with high threshold voltages
- Patent Title (中): 用于驱动具有高阈值电压的晶体管的系统和方法
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Application No.: US14106660Application Date: 2013-12-13
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Publication No.: US09276571B2Publication Date: 2016-03-01
- Inventor: Jiqing Yang , Meng Li , Qiang Luo , Lieyi Fang
- Applicant: ON-BRIGHT ELECTRONICS (SHANGHAI) CO., LTD.
- Applicant Address: CN Shanghai
- Assignee: On-Bright Electronics (Shanghai) Co., Ltd.
- Current Assignee: On-Bright Electronics (Shanghai) Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Jones Day
- Priority: CN201110317087 20111012
- Main IPC: H03K17/30
- IPC: H03K17/30 ; H03K17/06

Abstract:
System and method are provided for driving a transistor. The system includes a floating-voltage generator, a first driving circuit, and a second driving circuit. The floating-voltage generator is configured to receive a first bias voltage and generate a floating voltage, the floating-voltage generator being further configured to change the floating voltage if the first bias voltage changes and to maintain the floating voltage to be lower than the first bias voltage by a first predetermined value in magnitude. The first driving circuit is configured to receive an input signal, the first bias voltage and the floating voltage. The second driving circuit is configured to receive the input signal, a second bias voltage and a third bias voltage, the first driving circuit and the second driving circuit being configured to generate an output signal to drive a transistor.
Public/Granted literature
- US20140103970A1 SYSTEMS AND METHODS FOR DRIVING TRANSISTORS WITH HIGH TRESTHOLD VOLTAGES Public/Granted day:2014-04-17
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