Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14205852Application Date: 2014-03-12
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Publication No.: US09276569B2Publication Date: 2016-03-01
- Inventor: Kentaro Ikeda
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-133107 20130625
- Main IPC: H03L5/00
- IPC: H03L5/00 ; H03K17/0416 ; H01L25/07 ; H03K17/567 ; H03K17/10 ; H01L27/06 ; H01L27/088 ; H03K17/687

Abstract:
A semiconductor device according to an embodiment is provided with a normally-off transistor which includes a first source connected to a source terminal, a first drain, and a first gate connected to a gate terminal, and a normally-on transistor which includes a second source connected to the first drain, a second drain connected to a drain terminal, and a second gate connected to the gate terminal.
Public/Granted literature
- US20140375372A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-12-25
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