Invention Grant
- Patent Title: Structure and method and FinFET device
- Patent Title (中): 结构和方法以及FinFET器件
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Application No.: US14463342Application Date: 2014-08-19
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Publication No.: US09276117B1Publication Date: 2016-03-01
- Inventor: Yi-Jing Lee , Cheng-Hsien Wu , Chih-Hsin Ko , Pang-Yen Tsai , Tze-Liang Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes The device includes a strain-relaxed buffer (SRB) stack over a substrate, a first fin structure disposed over the SRB stack and a liner layer extending along the portion of the second SRB layer and the first semiconductor material layer of the first fin structure.
Public/Granted literature
- US20160056277A1 Structure and Method and FinFET Device Public/Granted day:2016-02-25
Information query
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