Invention Grant
US09276109B2 High-voltage transistor with high current load capacity and method for its production
有权
具有高电流负载能力的高压晶体管及其生产方法
- Patent Title: High-voltage transistor with high current load capacity and method for its production
- Patent Title (中): 具有高电流负载能力的高压晶体管及其生产方法
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Application No.: US12578256Application Date: 2009-10-13
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Publication No.: US09276109B2Publication Date: 2016-03-01
- Inventor: Georg Röhrer
- Applicant: Georg Röhrer
- Applicant Address: AT Unterpremstatten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Unterpremstatten
- Agency: McDermott Will & Emery LLP
- Priority: DE102008051245 20081010
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L21/266 ; H01L29/10
Abstract:
An isolation area (10) is provided over a drift region (12) with a spacing (d) to a contact area (4) provided for a drain connection (D). The isolation area is used as an implantation mask, in order to produce a dopant profile of the drift region in which the dopant concentration increases toward the drain. The implantation of the dopant can be performed instead before the production of the isolation area, and the later production of the isolation area (10) changes the dopant profile also in a way that the dopant concentration increases toward the drain.
Public/Granted literature
- US20100090278A1 High-Voltage Transistor with High Current Load Capacity and Method for its Production Public/Granted day:2010-04-15
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