Invention Grant
US09276016B2 Array substrate including oxide thin film transistor and method of fabricating the same
有权
包括氧化物薄膜晶体管的阵列衬底及其制造方法
- Patent Title: Array substrate including oxide thin film transistor and method of fabricating the same
- Patent Title (中): 包括氧化物薄膜晶体管的阵列衬底及其制造方法
-
Application No.: US14542909Application Date: 2014-11-17
-
Publication No.: US09276016B2Publication Date: 2016-03-01
- Inventor: Hee-Jung Yang , Dong-Sun Kim , Won-Joon Ho , A-Ra Kim
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2013-0143734 20131125
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/49 ; H01L21/28

Abstract:
An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region; and source and drain electrodes spaced apart from each other on the active layer.
Public/Granted literature
- US20150144944A1 Array Substrate Including Oxide Thin Film Transistor and Method of Fabricating the Same Public/Granted day:2015-05-28
Information query
IPC分类: