Invention Grant
- Patent Title: Structure and method for forming integral nitride light sensors on silicon substrates
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Application No.: US14551427Application Date: 2014-11-24
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Publication No.: US09275981B2Publication Date: 2016-03-01
- Inventor: Robert Forcier
- Applicant: RoseStreet Labs, LLC
- Applicant Address: US AZ Phoenix
- Assignee: RoseStreet Labs, LLC
- Current Assignee: RoseStreet Labs, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Greenberg Traurig, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L25/16 ; H01L31/02 ; H01L31/0304 ; H01L31/18
Abstract:
A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.
Public/Granted literature
- US20150102450A1 STRUCTURE AND METHOD FOR FORMING INTEGRAL NITRIDE LIGHT SENSORS ON SILICON SUBSTRATES Public/Granted day:2015-04-16
Information query
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