Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14328527Application Date: 2014-07-10
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Publication No.: US09275940B2Publication Date: 2016-03-01
- Inventor: Akira Ohashi , Akira Umezu , Hiromitsu Takeda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-150391 20130719
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/48 ; H01L23/00 ; H01L23/498 ; H01L23/31

Abstract:
A semiconductor device is provided which complies with restrictions on layout on a mounting substrate side. The semiconductor device includes a wiring substrate having a plurality of bonding leads at an upper surface having a rectangular shape, a semiconductor chip mounted over the upper surface of the wiring substrate, and having a plurality of electrode pads at a main surface having a rectangular shape similar to a square shape, and a plurality of metal wires for coupling the bonding leads of the wiring substrate to the electrode pads of the semiconductor chip. In a BGA, the metal wires are arranged at three sides of a main surface of the semiconductor chip, the bonding leads are provided in lines at the upper surface of the wiring substrate outside the respective opposed short sides of the main surface of the semiconductor chip, and the metal wires are coupled to the bonding leads.
Public/Granted literature
- US20150021749A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-01-22
Information query
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