Invention Grant
- Patent Title: Chemical mechanical polishing composition and method for polishing tungsten
- Patent Title (中): 化学机械抛光组合物和抛光钨的方法
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Application No.: US14317334Application Date: 2014-06-27
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Publication No.: US09275899B2Publication Date: 2016-03-01
- Inventor: Yi Guo , Raymond L. Lavoie, Jr.
- Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Applicant Address: US DE Newark
- Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee Address: US DE Newark
- Agent Thomas S. Deibert
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C09G1/02
Abstract:
A composition and method for tungsten is provided comprising: a metal oxide abrasive; an oxidizer; a tungsten removal rate enhancing substance according to formula I; and, water; wherein the polishing composition exhibits an enhanced tungsten removal rate and a tungsten removal rate enhancement.
Public/Granted literature
- US20150380295A1 CHEMICAL MECHANICAL POLISHING COMPOSITION AND METHOD FOR POLISHING TUNGSTEN Public/Granted day:2015-12-31
Information query
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