Invention Grant
US09275871B2 Nanostructures having low defect density and methods of forming thereof
有权
具有低缺陷密度的纳米结构及其形成方法
- Patent Title: Nanostructures having low defect density and methods of forming thereof
- Patent Title (中): 具有低缺陷密度的纳米结构及其形成方法
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Application No.: US14151635Application Date: 2014-01-09
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Publication No.: US09275871B2Publication Date: 2016-03-01
- Inventor: Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L51/40
- IPC: H01L51/40 ; G01N15/06 ; G01N33/00 ; G01N33/48 ; H01L21/308

Abstract:
A method of forming nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm.
Public/Granted literature
- US20150194316A1 NANOSTRUCTURES HAVING LOW DEFECT DENSITY AND METHODS OF FORMING THEREOF Public/Granted day:2015-07-09
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