Fast-gas switching for etching

Invention Grant

US09275869B2 Fast-gas switching for etching 有权

Title translation: 快速气体切换用于蚀刻

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Patent Title: Fast-gas switching for etching
Patent Title (中): 快速气体切换用于蚀刻
Application No.: US13958239

Application Date: 2013-08-02
Publication No.: US09275869B2

Publication Date: 2016-03-01
Inventor: Saravanapriyan Sriraman , Alexander Paterson
Applicant: Lam Research Corporation
Applicant Address: US CA Fremont
Assignee: Lam Research Corporation
Current Assignee: Lam Research Corporation
Current Assignee Address: US CA Fremont
Agency: Beyer Law Group LLP
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/3213 ; H01J37/32

Abstract:

A method for etching a layer in a plasma chamber with an inner injection zone gas feed and an outer injection zone gas feed is provided. The layer is placed in the plasma chamber. A pulsed etch gas is provided from the inner injection zone gas feed at a first frequency, wherein flow of pulsed etch gas from the inner injection zone gas feed is ramped down to zero. The pulsed etch gas is provided from the outer injection zone gas feed at the first frequency and simultaneous with and out of phase with the pulsed etch gas from the inner injection zone gas feed. The etch gas is formed into a plasma to etch the layer, simultaneous with the providing the pulsed etch gas from the inner injection zone gas feed and providing the pulsed gas from the outer interjection zone gas feed.

Abstract(Chinese):

提供了一种用于在内部注入区气体进料和外部注入区气体进料中蚀刻等离子体室中的层的方法。该层被放置在等离子体室中。从内部喷射区气体进料以第一频率提供脉冲蚀刻气体，其中来自内部喷射区气体进料的脉冲蚀刻气体流向下倾斜到零。脉冲蚀刻气体从外部注入区气体进料以第一频率提供，并与来自内部注入区气体进料的脉冲蚀刻气体同时进行并与异相相提供。蚀刻气体形成为等离子体以蚀刻该层，同时提供来自内部注入区气体进料的脉冲蚀刻气体，并提供来自外部侵入区域气体进料的脉冲气体。

Public/Granted literature

US20150037981A1 FAST-GAS SWITCHING FOR ETCHING Public/Granted day:2015-02-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀