Uniform roughness on backside of a wafer

Invention Grant

US09275868B2 Uniform roughness on backside of a wafer 有权

Title translation: 晶圆背面均匀粗糙度

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Patent Title: Uniform roughness on backside of a wafer
Patent Title (中): 晶圆背面均匀粗糙度
Application No.: US13946456

Application Date: 2013-07-19
Publication No.: US09275868B2

Publication Date: 2016-03-01
Inventor: Shawn A. Adderly , Jeffrey P. Gambino , Max L. Lifson , Matthew D. Moon , William J. Murphy , Timothy D. Sullivan , David C. Thomas
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES INC.
Current Assignee: GLOBALFOUNDRIES INC.
Current Assignee Address: KY Grand Cayman
Agency: Roberts Mlotkowski Safran & Cole, P.C.
Agent Michael LeStrange; Andrew M. Calderon
Main IPC: H01L21/308
IPC: H01L21/308 ; H01L21/306 ; H01L21/3065

Uniform roughness on backside of a wafer

Abstract:

Substrates (wafers) with uniform backside roughness and methods of manufacture are disclosed. The method includes forming a material on a backside of a wafer. The method further includes patterning the material to expose portions of the backside of the wafer. The method further includes roughening the backside of the wafer through the patterned material to form a uniform roughness.

Abstract(Chinese):

公开了具有均匀背面粗糙度的基板（晶片）和制造方法。该方法包括在晶片的背面形成材料。该方法还包括图案化材料以暴露晶片背面的部分。该方法还包括通过图案化材料粗糙化晶片的背面以形成均匀的粗糙度。

Public/Granted literature

US20150021743A1 UNIFORM ROUGHNESS ON BACKSIDE OF A WAFER Public/Granted day:2015-01-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）