Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US12951380Application Date: 2010-11-22
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Publication No.: US09275837B2Publication Date: 2016-03-01
- Inventor: Yohei Yamazawa , Naoki Matsumoto , Masahide Iwasaki , Naohiko Okunishi
- Applicant: Yohei Yamazawa , Naoki Matsumoto , Masahide Iwasaki , Naohiko Okunishi
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2009-265881 20091124
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H05H1/46

Abstract:
A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter 102(1) coaxially accommodates a coil 104(1) within a cylindrical outer conductor 110, and a ring member 122 is coaxially installed between the coil 104(1) and the outer conductor 110. The ring-shaped member 122 may be a plate body of a circular ring shape on a plane orthogonal to an axial direction of the outer conductor 110 and made of a conductor such as cupper or aluminum and electrically connected with the outer conductor 110 while electrically insulated from the coil 104(1).
Public/Granted literature
- US20110126765A1 PLASMA PROCESSING APPARATUS Public/Granted day:2011-06-02
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