Invention Grant
- Patent Title: Write buffer for resistive random access memory
- Patent Title (中): 用于电阻随机存取存储器的写缓冲器
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Application No.: US14284679Application Date: 2014-05-22
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Publication No.: US09275732B2Publication Date: 2016-03-01
- Inventor: Yue-Der Chih , Chiu-Wang Lien , Chia-Fu Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agent Chun-Ming Shih
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C7/12
Abstract:
A circuit includes a current generator and a voltage generator. The current generator is configured to generate a predetermined current flowing toward a selected cell in a memory array via a node during a write operation. The voltage generator is configured to generate a predetermined voltage. The voltage level at the node is clamped at a predetermined value associated with the predetermined voltage as the selected cell is switched between a low resistance state and a high resistance state during the write operation.
Public/Granted literature
- US20150170741A1 WRITE BUFFER FOR RESISTIVE RANDOM ACCESS MEMORY Public/Granted day:2015-06-18
Information query
