Invention Grant
US09274411B2 Reflection type blank masks, methods of fabricating the same, and methods of fabricating reflection type photo masks using the same 有权
反射型空白掩模,其制造方法以及使用其形成反射型光掩模的方法

  • Patent Title: Reflection type blank masks, methods of fabricating the same, and methods of fabricating reflection type photo masks using the same
  • Patent Title (中): 反射型空白掩模,其制造方法以及使用其形成反射型光掩模的方法
  • Application No.: US14258473
    Application Date: 2014-04-22
  • Publication No.: US09274411B2
    Publication Date: 2016-03-01
  • Inventor: Yong Dae KimByung Ho Nam
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: William Park & Associates Ltd.
  • Priority: KR10-2012-0060242 20120605
  • Main IPC: G03F1/24
  • IPC: G03F1/24 G03F1/22 G03F1/38
Reflection type blank masks, methods of fabricating the same, and methods of fabricating reflection type photo masks using the same
Abstract:
Reflection type blank masks are provided. The blank mask includes a substrate having a recessed pattern with a predetermined depth, a reflection layer substantially on the substrate, an absorption layer substantially on the reflection layer, and a resist layer substantially on the absorption layer, wherein the resist layer has a recessed part that is formed by transference of the profile from the recessed pattern.
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