Invention Grant
- Patent Title: Thin-layer element having an interference layer structure
- Patent Title (中): 具有干涉层结构的薄层元件
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Application No.: US13395333Application Date: 2010-09-10
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Publication No.: US09274258B2Publication Date: 2016-03-01
- Inventor: Christian Fuhse , Michael Rahm , Manfred Heim , Ralf Liebler
- Applicant: Christian Fuhse , Michael Rahm , Manfred Heim , Ralf Liebler
- Applicant Address: DE Munich
- Assignee: Giesecke & Devrient GMBH
- Current Assignee: Giesecke & Devrient GMBH
- Current Assignee Address: DE Munich
- Agency: Lathrop & Gage LLP
- Priority: DE102009041583 20090915
- International Application: PCT/EP2010/005563 WO 20100910
- International Announcement: WO2011/032665 WO 20110324
- Main IPC: G02B5/28
- IPC: G02B5/28 ; B42D25/29
Abstract:
The present invention relates to a thin-film element (30) having an interference layer structure for security papers, value documents and the like, having at least two semitransparent absorber layers (34, 38) and at least one dielectric spacing layer (36) arranged between the at least two absorber layers. According to the present invention, it is provided that the two absorber layers (34, 38) are each formed from a material having a complex refractive index N whose real part n and imaginary part k differ at least in a portion of the visible spectral range by a factor of 5 or more.
Public/Granted literature
- US20120170124A1 Thin-Layer Element Having an Interference Layer Structure Public/Granted day:2012-07-05
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