Invention Grant
- Patent Title: Method for determining interstitial oxygen concentration
- Patent Title (中): 确定间质氧浓度的方法
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Application No.: US14111974Application Date: 2012-04-13
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Publication No.: US09274072B2Publication Date: 2016-03-01
- Inventor: Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
- Applicant: Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oliff PLC
- Priority: FR1101190 20110415
- International Application: PCT/FR2012/000144 WO 20120413
- International Announcement: WO2012/140340 WO 20121018
- Main IPC: G01N27/04
- IPC: G01N27/04 ; H01L21/66 ; G01J3/42 ; G01N27/12 ; H01L21/322
Abstract:
A method for determining the interstitial oxygen concentration of a sample made from a p-doped semiconductor material includes a step of heat treatment of the sample in order to form thermal donors, determining the duration of the heat treatment required to obtain a compensated semiconductor material, determining the thermal donors concentration in the sample of compensated semiconductor material, from the charge carriers concentration, and determining the oxygen concentration from the thermal donors of and the duration of the heat treatment.
Public/Granted literature
- US20140033797A1 METHOD FOR DETERMINING INTERSTITIAL OXYGEN CONCENTRATION Public/Granted day:2014-02-06
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