Invention Grant
- Patent Title: MEMS device
- Patent Title (中): MEMS器件
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Application No.: US14188342Application Date: 2014-02-24
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Publication No.: US09274017B2Publication Date: 2016-03-01
- Inventor: Naofumi Nakamura , Kei Masunishi , Yumi Hayashi , Yusaku Asano , Tamio Ikehashi , Jun Deguchi , Daiki Ono
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2013-185606 20130906
- Main IPC: G01L9/12
- IPC: G01L9/12 ; G01L19/04 ; G01L9/00

Abstract:
According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a first and second MEMS elements on the substrate. Each of the first and second MEMS elements includes a fixed electrode on the substrate, a movable electrode above the fixed electrode, a first insulating film, the first insulating film and the substrate defining a cavity in which the fixed and movable electrodes are contained, and a first anchor on a surface of the first insulating film inside the cavity and configured to connect the movable electrode to the first insulating film. The cavity of the first MEMS element is closed. The cavity of the second MEMS element is opened by a through hole.
Public/Granted literature
- US20150068314A1 MEMS DEVICE Public/Granted day:2015-03-12
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