Invention Grant
- Patent Title: High-voltage level-shifter
- Patent Title (中): 高压电平转换器
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Application No.: US13995098Application Date: 2011-12-22
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Publication No.: US09252775B2Publication Date: 2016-02-02
- Inventor: Gerhard Schrom , Ravi Sankar Vunnam
- Applicant: Gerhard Schrom , Ravi Sankar Vunnam
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/066794 WO 20111222
- International Announcement: WO2013/095500 WO 20130627
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; H03K19/0185 ; H03K19/003

Abstract:
Described herein is a high-voltage level-shifter (HVLS) that can be used for both NMOS and PMOS bridges, exhibits a higher voltage tolerance for over-clocking than traditional level-shifters, has reduced crowbar current in its input driver, and no contention in its output driver. The HVLS comprises an input driver including a first signal conditioning unit, the input driver operating on a first power supply level and for conditioning an input signal as a first signal in the first signal conditioning unit; and a circuit to receive the first signal and to provide a second signal based at least in part on the first signal, the second signal being level-shifted from the first power supply level to a second power supply level, wherein the second power supply level is higher than the first power supply level.
Public/Granted literature
- US20140210517A1 HIGH-VOLTAGE LEVEL-SHIFTER Public/Granted day:2014-07-31
Information query
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