Invention Grant
- Patent Title: III-nitride semiconductor device with reduced electric field
- Patent Title (中): 具有减小的电场的III族氮化物半导体器件
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Application No.: US14332292Application Date: 2014-07-15
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Publication No.: US09252256B2Publication Date: 2016-02-02
- Inventor: Michael A. Briere
- Applicant: International Rectifier Corporation
- Applicant Address: US CA El Segundo
- Assignee: Infineon Technologies Americas Corp.
- Current Assignee: Infineon Technologies Americas Corp.
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/267 ; H01L29/40 ; H01L29/45 ; H01L29/47 ; H01L29/66 ; H01L29/201
Abstract:
A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N+ III-Nitride pad layers and the gate may be a Schottky gate or an insulated gate.
Public/Granted literature
- US20150014701A1 III-Nitride Semiconductor Device with Reduced Electric Field Public/Granted day:2015-01-15
Information query
IPC分类:
