Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US14336333Application Date: 2014-07-21
-
Publication No.: US09252227B2Publication Date: 2016-02-02
- Inventor: Yoshinari Higaki , Masayuki Sakakura , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2004-267673 20040915
- Main IPC: G02F1/136
- IPC: G02F1/136 ; H01L29/49 ; H01L27/12 ; H01L29/45 ; H01L29/417 ; H01L29/786 ; G02F1/1368 ; H01L27/32

Abstract:
It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.
Public/Granted literature
- US20140327078A1 Semiconductor Device Public/Granted day:2014-11-06
Information query
IPC分类: