Invention Grant
- Patent Title: Self-aligned insulated film for high-k metal gate device
- Patent Title (中): 用于高k金属栅极器件的自对准绝缘膜
-
Application No.: US14471293Application Date: 2014-08-28
-
Publication No.: US09252224B2Publication Date: 2016-02-02
- Inventor: Jin-Aun Ng , Maxi Chang , Jen-Sheng Yang , Ta-Wei Lin , Shih-Hao Lo , Chih-Yang Yeh , Hui-Wen Lin , Jung-Hui Kao , Yuan-Tien Tu , Huan-Just Lin , Chih-Tang Peng , Pei-Ren Jeng , Bao-Ru Young , Harry-Hak-Lay Chuang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/423 ; H01L21/8238 ; H01L29/49 ; H01L29/51 ; H01L21/28 ; H01L29/66
Abstract:
An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, a metal gate structure over the semiconductor substrate and the gate dielectric, a dielectric film on the metal gate structure, the dielectric film comprising oxynitride combined with metal from the metal gate, and an interlayer dielectric (ILD) on either side of the metal gate structure.
Public/Granted literature
- US20140367802A1 SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE Public/Granted day:2014-12-18
Information query
IPC分类:
