An Ni2Si layer and a TiC layer formed by sintering after deposition of a thin layer including Ni and a thin layer including Ti on a silicon carbide substrate have a structure in which the TiC layer is precipitated on a surface of the Ni2Si layer. A multilayer thin film including a Ti layer as a first thin film and an Ni layer as a second thin film is formed on the TiC layer surface in the structure. A TiC-derived C composition ratio is set to 15% or more at an interface between the TiC layer and the Ti layer of the multilayer thin film. As a result, a silicon carbide semiconductor element can be provided without occurrence of peeling after wafer dicing and subsequent picking up by a dicing tape.