Invention Grant
US09252178B2 Pixel of a multi-stacked CMOS image sensor and method of manufacturing the same
有权
多层CMOS图像传感器的像素及其制造方法
- Patent Title: Pixel of a multi-stacked CMOS image sensor and method of manufacturing the same
- Patent Title (中): 多层CMOS图像传感器的像素及其制造方法
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Application No.: US13205127Application Date: 2011-08-08
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Publication No.: US09252178B2Publication Date: 2016-02-02
- Inventor: Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
- Applicant: Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2011-0010299 20110201
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L27/146 ; H01L27/30 ; H01L27/12 ; H01L23/58 ; H01L33/08
Abstract:
Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.
Public/Granted literature
- US20120193689A1 PIXEL OF A MULTI-STACKED CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-08-02
Information query
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