Invention Grant
US09252172B2 Semiconductor device and method of forming EWLB semiconductor package with vertical interconnect structure and cavity region
有权
半导体器件和形成具有垂直互连结构和腔区的EWLB半导体封装的方法
- Patent Title: Semiconductor device and method of forming EWLB semiconductor package with vertical interconnect structure and cavity region
- Patent Title (中): 半导体器件和形成具有垂直互连结构和腔区的EWLB半导体封装的方法
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Application No.: US13149628Application Date: 2011-05-31
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Publication No.: US09252172B2Publication Date: 2016-02-02
- Inventor: Seng Guan Chow , Lee Sun Lim , Rui Huang , Xusheng Bao , Ma Phoo Pwint Hlaing
- Applicant: Seng Guan Chow , Lee Sun Lim , Rui Huang , Xusheng Bao , Ma Phoo Pwint Hlaing
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L31/0203
- IPC: H01L31/0203 ; H01L31/18 ; H01L27/146

Abstract:
A semiconductor device has a substrate containing a transparent or translucent material. A spacer is mounted to the substrate. A first semiconductor die has an active region and first conductive vias electrically connected to the active region. The active region can include a sensor responsive to light received through the substrate. The first die is mounted to the spacer with the active region positioned over an opening in the spacer and oriented toward the substrate. An encapsulant is deposited over the first die and substrate. An interconnect structure is formed over the encapsulant and first die. The interconnect structure is electrically connected through the first conductive vias to the active region. A second semiconductor die having second conductive vias can be mounted to the first die with the first conductive vias electrically connected to the second conductive vias.
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