Invention Grant
- Patent Title: Method of word-line formation by semi-damascene process with thin protective conductor layer
- Patent Title (中): 半镶嵌工艺用薄的保护导体层形成字线的方法
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Application No.: US14493021Application Date: 2014-09-22
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Publication No.: US09252153B1Publication Date: 2016-02-02
- Inventor: Cheng-Yi Lung , An-Chyi Wei , Ta Hung Yang
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Stout, Uxa & Buyan, LLP
- Agent Frank J. Uxa
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/76 ; H01L27/088 ; H01L27/115 ; H01L29/51 ; H01L21/768 ; H01L21/311 ; H01L21/3213 ; H01L21/3205 ; H01L29/423 ; H01L29/792 ; H01L23/528
Abstract:
A semi-damascene method is described for fabricating wordlines without stringers while maintaining critical cell dimensions when wordline pitch is less than 40 nm. A thin conducting layer protects a storage layer during manufacture, the thin conducting layer then making contact with filled-in conducting material.
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