Invention Grant
- Patent Title: Device including active floating gate region area that is smaller than channel area
- Patent Title (中): 器件包括有源浮栅区域小于通道面积
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Application No.: US14375695Application Date: 2012-04-30
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Publication No.: US09252149B2Publication Date: 2016-02-02
- Inventor: Ning Ge , Adam L. Ghozeil , Chaw Sing Ho , Trudy Benjamin
- Applicant: Ning Ge , Adam L. Ghozeil , Chaw Sing Ho , Trudy Benjamin
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agency: Dicke, Billig & Czaja, PLLC (PAT)
- International Application: PCT/US2012/035892 WO 20120430
- International Announcement: WO2013/165375 WO 20131107
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/788 ; G11C16/04 ; H01L21/28 ; H01L21/288 ; H01L21/3213 ; H01L29/10 ; H01L29/423 ; H01L29/66
Abstract:
A device including a drain, a channel, a floating gate, and a control gate. The channel surrounds the drain and has a channel area. The floating gate includes an active floating gate region that has an active floating gate region area. The control gate is coupled to the active floating gate region via a control capacitance, wherein the active floating gate region area is smaller than the channel area.
Public/Granted literature
- US20140374812A1 DEVICE INCLUDING ACTIVE FLOATING GATE REGION AREA THAT IS SMALLER THAN CHANNEL AREA Public/Granted day:2014-12-25
Information query
IPC分类:
