Invention Grant
- Patent Title: Semiconductor device connected by anisotropic conductive film
- Patent Title (中): 通过各向异性导电膜连接的半导体器件
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Application No.: US14072872Application Date: 2013-11-06
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Publication No.: US09252117B2Publication Date: 2016-02-02
- Inventor: Kyoung Hun Shin , Kyu Bong Kim , Hyun Joo Seo , Young Ju Shin , Woo Jun Lim
- Applicant: Kyoung Hun Shin , Kyu Bong Kim , Hyun Joo Seo , Young Ju Shin , Woo Jun Lim
- Applicant Address: KR Gumi-si, Gyeongsangbuk-do
- Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee Address: KR Gumi-si, Gyeongsangbuk-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2012-0143299 20121211
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/00
Abstract:
A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.
Public/Granted literature
- US20140159229A1 SEMICONDUCTOR DEVICE CONNECTED BY ANISOTROPIC CONDUCTIVE FILM Public/Granted day:2014-06-12
Information query
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