Interconnect structure and method of forming same

Invention Grant

US09252110B2 Interconnect structure and method of forming same 有权

Title translation: 互连结构及其形成方法

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Patent Title: Interconnect structure and method of forming same
Patent Title (中): 互连结构及其形成方法
Application No.: US14158364

Application Date: 2014-01-17
Publication No.: US09252110B2

Publication Date: 2016-02-02
Inventor: Hsiao Yun Lo , Lin-Chih Huang , Tasi-Jung Wu , Hsin-Yu Chen , Yung-Chi Lin , Ku-Feng Yang , Tsang-Jiuh Wu , Wen-Chih Chiou
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L23/00

Interconnect structure and method of forming same

Abstract:

An apparatus comprises a dielectric layer formed on a first side of a substrate, a first side interconnect structure comprising a first metal line and a pad formed in the dielectric layer, wherein the pad comprises a bottom portion formed of a first conductive metal and an upper portion formed of a second conductive metal, and wherein sidewalls of the upper portion are surrounded by the bottom portion and a top surface of the pad is coplanar with a top surface of the first metal line and a passivation layer formed over the dielectric layer, wherein the first metal line is embedded in the passivation layer.

Abstract(Chinese):

一种装置包括形成在基板的第一侧上的电介质层，第一侧互连结构，包括第一金属线和形成在电介质层中的焊盘，其中该焊盘包括由第一导电金属和上部部分由第二导电金属形成，并且其中上部的侧壁由底部包围，并且焊盘的顶表面与第一金属线的顶表面和形成在电介质层上的钝化层共面，其中第一金属线嵌入在钝化层中。

Public/Granted literature

US20150206846A1 Interconnect Structure and Method of Forming Same Public/Granted day:2015-07-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）