Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14454432Application Date: 2014-08-07
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Publication No.: US09252106B2Publication Date: 2016-02-02
- Inventor: Jeong-Kil Lee , Chan-Ho Park , Nam-Ki Cho , Won-Sang Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2013-0094979 20130809
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/544 ; H01L21/762 ; H01L21/283
Abstract:
Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.
Public/Granted literature
- US20150044854A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-02-12
Information query
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