Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US14297679Application Date: 2014-06-06
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Publication No.: US09252102B2Publication Date: 2016-02-02
- Inventor: Bing-Lung Yu , Chin-Tsan Yeh , Yung-Tai Hung , Chin-Ta Su
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/532 ; H01L23/522 ; H01L21/768
Abstract:
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a conductive layer, a via, and a barrier layer disposed between the conductive layer and the via. The barrier layer is stuffed with oxygen.
Public/Granted literature
- US20150357286A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-12-10
Information query
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