Invention Grant
US09252057B2 Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application
有权
激光和等离子体蚀刻晶片切割，部分预固化用于膜框架晶片应用的UV释放切割胶带
- Patent Title: Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application
- Patent Title (中): 激光和等离子体蚀刻晶片切割，部分预固化用于膜框架晶片应用的UV释放切割胶带
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Application No.: US14052085Application Date: 2013-10-11
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Publication No.: US09252057B2Publication Date: 2016-02-02
- Inventor: Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/67 ; H01L21/78 ; H01L21/683
Abstract:
Methods and systems of laser and plasma etch wafer dicing using UV-curable adhesive films. A method includes forming a mask covering ICs formed on the wafer. The semiconductor wafer is coupled to a film frame by a UV-curable adhesive film. A pre-cure of the UV-curable adhesive film cures a peripheral portion of the adhesive extending beyond an edge of the wafer to improve the exposed adhesive material's resistance to plasma etch and reduce hydrocarbon redeposition within the etch chamber. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the ICs. A center portion of the UV-curable adhesive is then cured and the singulated ICs detached from the film.
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