Invention Grant
- Patent Title: Method for permanent bonding of wafers
- Patent Title (中): 晶圆永久接合方法
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Application No.: US13981353Application Date: 2011-01-25
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Publication No.: US09252042B2Publication Date: 2016-02-02
- Inventor: Thomas Plach , Kurt Hingerl , Markus Wimplinger , Christoph Flötgen
- Applicant: Thomas Plach , Kurt Hingerl , Markus Wimplinger , Christoph Flötgen
- Applicant Address: AT St. Florian am Inn
- Assignee: EV Group E. Thallner GmbH
- Current Assignee: EV Group E. Thallner GmbH
- Current Assignee Address: AT St. Florian am Inn
- Agency: Kusner & Jaffe
- International Application: PCT/EP2011/000299 WO 20110125
- International Announcement: WO2012/100786 WO 20120802
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/18 ; H01L21/20 ; H01L21/762

Abstract:
A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.
Public/Granted literature
- US20130299080A1 METHOD FOR PERMANENT BONDING OF WAFERS Public/Granted day:2013-11-14
Information query
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