Invention Grant
US09252022B1 Patterning assist feature to mitigate reactive ion etch microloading effect
有权
图案辅助功能，以减轻反应离子蚀刻微载荷效应
- Patent Title: Patterning assist feature to mitigate reactive ion etch microloading effect
- Patent Title (中): 图案辅助功能，以减轻反应离子蚀刻微载荷效应
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Application No.: US14533629Application Date: 2014-11-05
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Publication No.: US09252022B1Publication Date: 2016-02-02
- Inventor: Daniel J. Dechene , Geng Han , Scott M. Mansfield , Stuart A. Sieg , Yunpeng Yin
- Applicant: International Business Machines Corporation
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Cantor Colburn LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/308 ; H01L21/3065 ; H01L29/66
Abstract:
A method of fabricating a semiconductor device includes forming a masking layer on an upper surface of a semiconductor substrate. The masking layer is patterned to form at least one masking element that designates an active region of the semiconductor substrate and at least one patterning assist feature adjacent the at least one masking element. An etching process is performed to form a plurality of semiconductor fins on the semiconductor substrate. The plurality of semiconductor fins include at least one isolated fin formed on the active region according to the at least one masking element and at least one sacrificial fin formed according to the patterning assist feature that reduces a loading effect that occurs during the etching process.
Information query
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