Invention Grant
US09252021B2 Method for patterning a plurality of features for Fin-like field-effect transistor (FinFET) devices
有权
用于图形化鳍状场效应晶体管（FinFET）器件的多个特征的方法
- Patent Title: Method for patterning a plurality of features for Fin-like field-effect transistor (FinFET) devices
- Patent Title (中): 用于图形化鳍状场效应晶体管（FinFET）器件的多个特征的方法
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Application No.: US14485168Application Date: 2014-09-12
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Publication No.: US09252021B2Publication Date: 2016-02-02
- Inventor: Hoi-Tou Ng , Kuei-Liang Lu , Ming-Feng Shieh , Ru-Gun Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/84 ; H01L27/12
Abstract:
Methods for patterning fins for fin-like field-effect transistor (FinFET) devices are disclosed. An exemplary method includes providing a semiconductor substrate, forming a plurality of elongated protrusions on the semiconductor substrate, the elongated protrusions extending in a first direction, and forming a mask covering a first portion of the elongated protrusions, the mask being formed of a first material having a first etch rate. The method also includes forming a spacer surrounding the mask, the spacer being formed of a second material with an etch rate lower than the etch rate of the first material, the mask and the spacer together covering a second portion of the elongated protrusions larger than the first portion of the elongated protrusions. Further, the method includes removing a remaining portion of the plurality of elongated protrusions not covered by the mask and spacer.
Public/Granted literature
- US20150072527A1 METHOD FOR PATTERNING A PLURALITY OF FEATURES FOR FIN-LIKE FIELD-EFFECT TRANSISTOR (FINFET) DEVICES Public/Granted day:2015-03-12
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