Invention Grant
- Patent Title: Stacked nanowire
- Patent Title (中): 堆叠的纳米线
-
Application No.: US14017822Application Date: 2013-09-04
-
Publication No.: US09252016B2Publication Date: 2016-02-02
- Inventor: Kangguo Cheng , Bruce B. Doris , Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Cantor Colburn LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/06 ; H01L29/66 ; H01L21/02 ; H01L29/78 ; B82Y40/00 ; H01L29/775 ; B82Y10/00
Abstract:
A method of fabricating stacked nanowire for a transistor gate and a stacked nanowire device are described. The method includes etching a fin as a vertical structure from a substrate and forming two or more pairs of spacers at vertically separated positions of the fin. The method also includes oxidizing to form the nanowires at the vertically separated positions of the fin.
Public/Granted literature
- US20150064891A1 STACKED NANOWIRE Public/Granted day:2015-03-05
Information query
IPC分类:
