Invention Grant
- Patent Title: Memory interface signal reduction
- Patent Title (中): 存储器接口信号降低
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Application No.: US12974057Application Date: 2010-12-21
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Publication No.: US09251874B2Publication Date: 2016-02-02
- Inventor: Bill Nale
- Applicant: Bill Nale
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C7/10 ; G11C7/22 ; G11C8/18

Abstract:
In some embodiments a controller includes a memory activate pin, one or more combined memory command/address signal pins, and a selection circuit adapted to select in response to the memory activate pin as each of the one or more combined memory command/address signal pins either a memory command signal or a memory address signal. Other embodiments are described and claimed.
Public/Granted literature
- US20120159059A1 MEMORY INTERFACE SIGNAL REDUCTION Public/Granted day:2012-06-21
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