Invention Grant
US09250535B2 Source, target and mask optimization by incorporating countour based assessments and integration over process variations 有权
来源,目标和面具优化,包括基于countour的评估和整合过程变化

Source, target and mask optimization by incorporating countour based assessments and integration over process variations
Abstract:
Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output.
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