Invention Grant
- Patent Title: Gas sensor
- Patent Title (中): 气体传感器
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Application No.: US14366912Application Date: 2012-12-27
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Publication No.: US09250210B2Publication Date: 2016-02-02
- Inventor: Isao Shimoyama , Kiyoshi Matsumoto , Yusuke Takei , Hidetoshi Takahashi , Noboru Kiga , Masahito Honda
- Applicant: The University of Tokyo , OMRON Corporation
- Applicant Address: JP Tokyo JP Kyoto-shi
- Assignee: The University of Tokyo,Omron Corporation
- Current Assignee: The University of Tokyo,Omron Corporation
- Current Assignee Address: JP Tokyo JP Kyoto-shi
- Agency: Locke Lord LLP
- Priority: JP2012-004963 20120113
- International Application: PCT/JP2012/083879 WO 20121227
- International Announcement: WO2013/105449 WO 20130718
- Main IPC: G01N27/414
- IPC: G01N27/414 ; G01N27/48 ; G01N33/00 ; H01L51/00 ; H01L51/05

Abstract:
A gas sensor that can enhance gas detection sensitivity more than the conventional sensors with a simple configuration is proposed. An electric double layer including a gate insulating layer is formed in an ionic liquid (IL), a change of a state of the gate insulating layer in the ionic liquid (IL) that occurs by absorbing a gas is directly reflected in a source-drain current (Isd) that flows in a carbon nanotube (8). Therefore, the gas detection sensitivity can be enhanced more than in the conventional sensors. Further, since the ionic liquid (IL) can be simply provided on a substrate (2) to be in contact with the carbon nanotube (8) and a gate electrode (7), the configuration that chemically modifies a surface of the carbon nanotube with a plurality of polymers as in the conventional gas sensors is not needed, and the configuration can be simplified correspondingly.
Public/Granted literature
- US20140346042A1 GAS SENSOR Public/Granted day:2014-11-27
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