Invention Grant
- Patent Title: Methods of forming a ferroelectric memory cell
- Patent Title (中): 形成铁电存储单元的方法
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Application No.: US14026883Application Date: 2013-09-13
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Publication No.: US09231206B2Publication Date: 2016-01-05
- Inventor: Qian Tao , Matthew N. Rocklein , Beth R. Cook , D. V. Nirmal Ramaswamy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00 ; H01L27/115 ; H01L49/02
Abstract:
A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.
Public/Granted literature
- US20150076437A1 METHODS OF FORMING A FERROELECTRIC MEMORY CELL AND RELATED SEMICONDUCTOR DEVICE STRUCTURES Public/Granted day:2015-03-19
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