Invention Grant
- Patent Title: Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device
- Patent Title (中): 制造压电薄膜晶片，压电薄膜元件和压电薄膜器件的方法
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Application No.: US13137202Application Date: 2011-07-27
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Publication No.: US09231185B2Publication Date: 2016-01-05
- Inventor: Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
- Applicant: Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
- Applicant Address: JP Hitachi-shi, Ibaraki-ken
- Assignee: SCIOCS COMPANY LIMITED
- Current Assignee: SCIOCS COMPANY LIMITED
- Current Assignee Address: JP Hitachi-shi, Ibaraki-ken
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-171769 20100730
- Main IPC: H01B13/00
- IPC: H01B13/00 ; H01L41/08 ; H05K3/10 ; H01L21/67 ; H01L41/187 ; H01L41/332 ; H01L41/314 ; H01L41/316 ; H01L41/318
Abstract:
A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
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