Invention Grant
- Patent Title: Light-emitting device
- Patent Title (中): 发光装置
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Application No.: US14169920Application Date: 2014-01-31
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Publication No.: US09231154B2Publication Date: 2016-01-05
- Inventor: Hisao Ikeda , Takuya Kawata , Manabu Niboshi , Katsuhiro Kikuchi , Shinichi Kawato , Takashi Ochi , Yuto Tsukamoto , Tomohiro Kosaka , Tomofumi Osaki
- Applicant: Hisao Ikeda , Takuya Kawata , Manabu Niboshi , Katsuhiro Kikuchi , Shinichi Kawato , Takashi Ochi , Yuto Tsukamoto , Tomohiro Kosaka , Tomofumi Osaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2013-023576 20130208
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/26 ; H01L51/50 ; H01L51/52 ; H01L27/32

Abstract:
The emission efficiency of a light-emitting device including a microcavity structure is improved. The light-emitting device includes a plurality of light-emitting elements. The plurality of light-emitting elements each include a reflective electrode, a transparent electrode, a plurality of light-emitting layers, and a semi-transmissive and semi-reflective electrode stacked in that order. The plurality of light-emitting layers emit light of different colors. A surface roughness of the transparent electrode in the light-emitting element which is among the plurality of light-emitting elements and in which light emitted from the light-emitting layer closest to the reflective electrode is amplified and emitted outside is greater than surface roughnesses of the transparent electrodes in the other light-emitting elements.
Public/Granted literature
- US20140225102A1 LIGHT-EMITTING DEVICE Public/Granted day:2014-08-14
Information query
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