Invention Grant
- Patent Title: Convex shaped thin-film transistor device having elongated channel over insulating layer
- Patent Title (中): 凸形薄膜晶体管器件在绝缘层上具有细长沟道
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Application No.: US14215468Application Date: 2014-03-17
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Publication No.: US09231112B2Publication Date: 2016-01-05
- Inventor: Yukio Hayakawa , Hiroyuki Nansei
- Applicant: SPANSION LLC
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Priority: JP2006-353415 20061227
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L27/148 ; H01L21/70 ; H01L27/108 ; H01L29/94 ; H01L29/02 ; H01L29/788 ; H01L21/28 ; H01L27/115 ; H01L21/84 ; H01L27/12 ; H01L29/423 ; H01L29/66
Abstract:
The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density. The semiconductor device includes: first bit lines formed on a substrate; an insulating layer that is provided between the first bit lines and in a groove in the substrate, and has a higher upper face than the first bit lines; channel layers that are provided on both side faces of the insulating layer, and are coupled to the respective first bit lines; and charge storage layers that are provided on the opposite side faces of the channel layers from the side faces on which the insulating layers are formed.
Public/Granted literature
- US20140209991A1 CONVEX SHAPED THIN-FILM TRANSISTOR DEVICE Public/Granted day:2014-07-31
Information query
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